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Freescale Semiconductor Technical Data
Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors
Device Characteristics (From Device Data Sheet) Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class AB linear base station applications. * Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 300 mWatt Power Gain -- 11.5 dB Efficiency -- 25% * 3 Watts P1dB @ 3.55 GHz * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * N Suffix Indicates Lead - Free Terminations Reference Design Characteristics * Typical Single - Channel W - CDMA Performance: - 45 dBc ACPR, 2.45 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power -- 350 mWatt Power Gain -- 12.5 dB Efficiency -- 26%
MRFG35003NT1 MRFG35003MT1 BWA
BWA 2.4 - 2.5 GHz
VGG
VDD
BIAS
BIAS
RF INPUT MATC H
RF OUTPUT MATC H
MRFG35003NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Monte Miller and Rick Hooper
This reference design is designed to demonstrate the typical RF performance characteristics of the MRFG35003NT1(MT1) when applied for the 2.4 - 2.5 GHz W - CDMA frequency band. The reference design is tuned for the best tradeoff between good W - CDMA linearity and good power capability and efficiency.
HEATSINKING
When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements.
REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS
Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of "no tune" distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as "building blocks" for our customers.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35003NT1 MRFG35003MT1 BWA 1
Motorola, Inc. 2003 RF Reference Design Data Freescale Semiconductor
VGS
VDD
C9
C8
C7
C6
C5 C4 C15
C14
C13
C12
C11
C10
C3
C16
R1 Z7 L1 Z1 C1 C2 Z2 Z3 Z4 Z5 Z6 Z8 L2 Z9 Z10 Z11 Z12 C18 C17 Z13
RF INPUT
RF OUTPUT
Z1, Z13 Z2 Z3 Z4 Z5 Z6, Z8
0.044 0.044 0.105 0.044 0.340 0.146
x 0.295 x 0.730 x 0.045 x 0.015 x 0.320 x 0.070
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z7 Z9 Z10 Z11 Z12 PCB
0.045 x 0.100 Microstrip 0.200 x 0.040 Microstrip 0.260 x 0.020 Microstrip 0.200 x 0.516 Microstrip 0.044 x 0.534 Microstrip Rogers 4350, 0.020, r = 3.50
Figure 1. MRFG35003NT1(MT1) BWA Reference Design Schematic
Table 1. MRFG35003NT1(MT1) BWA Reference Design Component Designations and Values
Part C1 C2 C3, C16 C4, C15 C5, C14 C6, C13 C7, C12 C8, C11 C9, C10 C17 C18 L1 L2 R1 Description 3.9 pF Chip Capacitor 0.9 pF Chip Capacitor 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 F Chip Capacitors 39K pF Chip Capacitors 22 F Tantalum Capacitors 1.0 pF Chip Capacitor 15.0 pF Chip Capacitor 4.7 nH Chip Inductor 8.2 nH Chip Inductor 75 W, 1/4 W 1% Chip Resistor Value, P/N or DWG 08051J3R9BBT 08051J0R9BBT 100A100JP150X 100A101JP150X 100B101JP500X 100B102JP500X CDR33BX104AKWS 200B393KP500X T491X226K035AS 08051J1R0BBT 08051J15R0GBT LL2102- F4N7K LL1608- FHN2K D55342M07B75JOR Manufacturer AVX AVX ATC ATC ATC ATC Kemet ATC Newark AVX AVX TOKO TOKO Newark
MRFG35003NT1 MRFG35003MT1 BWA 2 RF Reference Design Data Freescale Semiconductor
C9
C8
C7 C6 C5
C12 C13 C14
C11
C10
C4 C3 R1 L1 C1 C2 L2
C15 C16
C18 C17
MRFG35003M Rev 1
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRFG35003NT1(MT1) BWA Reference Design Component Layout
MRFG35003NT1 MRFG35003MT1 BWA RF Reference Design Data Freescale Semiconductor 3
CHARACTERISTICS
18 16 G T, TRANSDUCER GAIN (dB) 14 12 10 8 6 4 0.1 Pout, OUTPUT POWER (WATTS) 1 MRFG35003M @ 2.5 GHz VDS = 12 Vdc, IDQ = 55 mA f = 2.5 GHz, 8.5 P/A 3GPP W-CDMA S = 0.857e-136.97_ L = 0.681e-178.94_ GT PAE 45 40 35 30 25 20 15 10 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 0 -10 IRL ACPR, (dBc) ACPR (dBc) MRFG35003M @ 2.5 GHz VDS = 12 Vdc, IDQ = 55 mA f = 2.5 GHz, 8.5 P/A 3GPP W-CDMA S = 0.857e-136.97_, L = 0.681e-178.94_ -20 ACPR -30 -40 -50 -60 0.1 Pout, OUTPUT POWER (WATTS) 1 -20 -30 -40 -50 0 -10
-60
Figure 3. Transducer Gain and Power Added Efficiency versus Output Power
Figure 4. W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown.
16
50 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB)
0 -10 -20 -30 -40 ACPR -50 MRFG35003M @ 2.45 GHz VDS = 12 Vdc, IDQ = 55 mA 8.5 P/A 3GPP W-CDMA IRL
0 -10 -20 -30 -40 -50 -60 0.01 0.1 Pout, OUTPUT POWER (WATTS) 1
G T , TRANSDUCER GAIN (dB)
14 GT
40
12 MRFG35003M @ 2.45 GHz VDS = 12 Vdc, IDQ = 55 mA 8.5 P/A 3GPP W-CDMA
30
10
20 PAE 10 0
8 6 0.01 0.1 Pout, OUTPUT POWER (WATTS) 1
-60
Figure 5. Transducer Gain and Power Added Efficiency versus Output Power
Figure 6. W - CDMA ACPR and Input Return Loss versus Output Power
NOTE: Data in Figures 5 and 6 is generated from the test circuit shown.
MRFG35003NT1 MRFG35003MT1 BWA 4 RF Reference Design Data Freescale Semiconductor
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Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Data
MRFG35003NT1 MRFG35003MT1 BWA 5
Freescale Semiconductor

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